Thin Solid Films, Vol.516, No.21, 7871-7874, 2008
Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O-2 plasma for non-volatile phase-change memory device
The reactive-ion etching of Sn-doped Ge2Sb2Te5 (GST) films with different Sn concentration in CHF3/O-2 plasma was studied. By changing the gas mixture ratio and radio-frequency (RF) power under constant chamber pressure, the relatively smooth surface morphologies of etched Sn-doped GST were obtained. The characteristics of etch rate as functions of gas mixture, chamber pressure, and RF power were also investigated. Besides that, the etching selectivity of Sn-doped GST to SiO2 and photoresist was measured. (c) 2008 Elsevier B.V. All rights reserved.
Keywords:Sn-doped germanium antimony telluride;reactive-ion etching;selectivity;phase change material;scanning electron microscopy;trifluoromethane;oxygen;CHF3/O2