Infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 mu W and 0.015%. (C) 2007 Elsevier B.V All rights reserved.