P-type SrCu2O2 (SCO) films were deposited by pulsed laser deposition, from SCO target, on glass and n-type Si substrates. SCO films were deposited at two different substrate temperatures, namely 300 degrees C and 500 degrees C, while the oxygen pressure was kept constant at 5 x 10(-2) Pa and their properties were investigated. Films deposited at 300 degrees C were single phase SrCU2O2, whereas deviation from stoichiometry was observed for films deposited on Si at 500 degrees C. Both SCO films were p-type materials and their resistivity increased with the increase of the substrate temperature (from 142 Omega cm to 10 k Omega cm). Their transparency reached 70% even for films with thickness of 800 nm. SCO films deposited on n-type Si showed rectifying behavior and the p-SCO/n-Si heterostructure formed from low-temperature deposited SCO (300 degrees C) exhibited better p/n junction properties than that formed at the substrate temperature of 500 degrees C. Improvements which can be implemented for enhancing the output performance of the heterojunction are addressed. (C) 2008 Elsevier B.V. All rights reserved.