Perovskite (Ba,Ca)(ZrTi)O-3 (BCZT) is a representative dielectric material for capacitors and its properties can be controlled by varying the Zr/Ti ratio and substituting Ca for the Ba site. In this study, Ba(Zr,Ti)O-3 (BZT) and BCZT thin films were synthesized by chemical solution deposition. Perovskite BZT and BUT thin films were fabricated on Pt/TiOx/SiO2/Si substrates at temperatures above 650 degrees C. Among the BZT thin films with different Zr/Ti ratios, BZT (Zr:Ti=0.20:0.80) thin films exhibited homogeneous and smooth surface morphologies and excellent dielectric properties. The dielectric constant of the BZT (Zr:Ti=20:80) thin film was approximately 900, with a dielectric loss tangent of less than 5% at room temperature. Furthermore, the Ca-doped BZT (Ba:Ca=0.95:0.05, Zr:Ti=0.20:0.80) thin films had a larger dielectric constant than a BZT (Zr:Ti=0.20:0.80) film without Ca, lower dependence of the dielectric constant on temperature and lower dielectric loss over a wide range of temperatures. (C) 2008 Elsevier B.V. All rights reserved.