In this work, Si(+) ions generated by the electron-beam evaporator are employed to influence strain and morphology of MBE-grown SiGe layers on Si (100) substrates. Strain relaxation of SiGe layers and modified surface morphology are attained by ion bombardment at reduced growth temperature. A study on the influence of ion energy (0-1000 eV) and density on both degree of relaxation and surface morphology is Regular misfit-dislocation networks and a specific surface morphology are observed when the in performed. situ ion bombardment at reduced temperatures leads to a degree of relaxation around 25%. This surface morphology shows uniform shallow pyramids ordered in < 110 > directions which provide a template favourable for nanomagnets and other opto- and nanoelectronic applications. (c) 2008 Elsevier B.V. All rights reserved.