The influence of elastic strains on of the growth of the Si/Ge/Si heterosystem with ordered Ge "hut"-clusters was studied. The thickness of the silicon film where elastic strains are relaxed is determined as dependent on the germanium layer thickness. Changes in the properties of "hut"-clusters are accompanied by modifying the first stage of the Ge film growth on the Si(100) surface. It is demonstrated that the thickness of the wetting Ge layer decreases considerably towards its disappearance as a result of a rise of growth temperature and a decrease in the silicon spacer thickness. (c) 2008 Published by Elsevier B.V.