Molecular beam epitaxy of the ferromagnetic silicide Fe(3)Si on Ge and Si substrates was investigated in a wide temperature range (60-400 degrees C). Epitaxial growth of Fe(3)Si layers was achieved on Ge (110), Ge (111), and Si (111) substrates. Especially, very low value (2.2%) of the minimum scattering yield in RBS measurements was obtained from Fe(3)Si layers, which were grown on Ge (111) at low temperature (60-130 degrees C) under the stoichiometric condition (Fe:Si=3:1). Transmission electron microscopy measurements confirmed the formation of DO3-type Fe(3)Si and atomically flat interface between Fe(3)Si and Ge (111). In addition, thermal stability of Fe(3)Si was guaranteed up to 300 degrees C. Such high quality Fe(3)Si on Ge (111) substrates can be employed to realize Ge channel spin transistors, which can be integrated with Si large-scale integrated circuits. (c) 2008 Elsevier B.V. All rights reserved.