LaLuO(3) thin films have been deposited with atomic layer deposition on Si substrates using beta-diketonate compounds for the rare earth metals and ozone as the oxygen source. Subsequently, the films were investigated regarding their chemical composition, morphology, and electrical characteristics. The as deposited films are amorphous, uniform, and smooth but reveal an excess of oxygen and a low kappa-value of similar to 17. Oxygen annealing of the films at 800 degrees C for 5 min leads to a reduction of the oxygen content and a dramatic increase of the permittivity to similar to 30 but also to a crystallization of thick films. (c) 2008 Elsevier B.V. All rights reserved.