We have studied the temperature dependence of crystalline Ge film growth on quartz, Si(100), Si(110) and Si (111) substrates from VHF-inductively-coupled plasma (ICP) of GeH(4)+H(2). The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the crystallinity of Ge film grown on c-Si is markedly improved, especially on Si(110) and Si(100), and the signals originating from the disordered network becomes hardly observed at 350 degrees C in three different crystallographic orientations. (c) 2008 Elsevier B.V. All rights reserved.