We have studied the epitaxial Si growth on 4-inch-(001) Si wafers by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) using a porous-carbon electrode. Defect-free growth of epitaxial Si is confirmed in the temperature range 470-570 degrees C by transmission electron microscopy. High minority carrier generation lifetime (2.0 ms) is observed in the Si film grown at 570 degrees C with a rate of 0.35 mu m/min. In situ H(2) AP-plasma cleaning of the substrate surface is effective for eliminating 0 and C concentration peaks at the film/substrate interface, Effects of plasma heating and ion bombardment of the growing-film surface have been discussed. (c) 2008 Elsevier B.V. All rights reserved.