A novel monocrystalline high-performance thermistor material based on SiGe quantum well (QW) heterostructures is presented. A comparison between different growth temperatures for Si(0.7)Ge(0.3) and Si growth is performed. Results illustrate a value of 2.3%/K for TCR with a low excess noise. (c) 2008 Elsevier B.V. All rights reserved.