We fabricated strained-Si n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on very thin SiGe buffer layers. The ion implantation technique was successfully employed and the Si0.83Ge0.17 relaxed layer with the thickness as small as 100 run was obtained. As a result, 2.0 times drive current, 2.6 times transconductance and 1.6 times mobility enhancements over the control Si device were obtained, indicating that the ion implantation technique is very promising for realization of high performance strained-Si devices on very thin SiGe virtual substrates. (C) 2008 Elsevier B.V. All rights reserved.