Effect of growth temperature (T(g)) on photoluminescence (PL) of Ge(Si) self- assembled islands embedded between tensile-strained Si layers was studied. The observed red-shift of the PL peak from dome islands with a decrease of Tg from 700 degrees C to 630 degrees C is associated with an increase of Ge content in the islands and with suppression of smearing of the strained Si layers. The blue-shift of the islands-related PL peak with a decrease of T(g) from 630 degrees C to 600 degrees C is associated with change of the type of islands from "dome" to "hut", which is accompanied by a dramatic decrease in the island's height (C) 2008 Elsevier B.V. All rights reserved.