Pd-doped SnO2 thin films of rutile structure were deposited using radio-frequency magnetron sputtering method on sapphire substrates with three different orientations: r-cut (01 (1) over bar2), a-cut (11 (2) over bar0), and m-cut (10 (1) over bar0). The deposited films were characterized using transmission electron microscopy and X-ray pole figures. All the deposited films were polycrystalline but highly oriented with the interface, and also had in-plane or near-epitaxial relationships were observed for the SnO2 films grown on all three cases of sapphire substrates. In particular, (101), (101), and (001) oriented films were respectively grown on r-, a-, and m-cut sapphire substrates. The in-plane orientation relationships were determined to be [010]SnO2 parallel to [100]Al2O3 and [10 (1) over bar] SnO2 parallel to [(1) over bar(2) over bar1]Al2O3 (r-cut), [(1) over bar 01]SnO2 parallel to [1 (1) over bar0]Al2O3 and [010]SnO2 parallel to [001] Al2O3 (a-cut), and [100]SnO2 parallel to [010] Al2O3 and [010]SnO2 parallel to [001]Al2O3 (m-cut). A highly textured structure was observed for the films grown on m-cut substrate. (c) 2008 Elsevier B.V. All rights reserved.