The characteristics of a 6H-SiC UV SENSOR with n(+)-p junction fabricated by N(+)-implantation. were investigated at high temperatures of up to 500 degrees C. Photocurrent was measured as a function of the incident light wavelength and the temperature of the sensor. The photocurrent was increasing with temperature elevation to be two to three times its room temperature value at 500 degrees C. The temperature coefficient of photocurrent was estimated to be about 0.5%/degrees C in the range of 100-500 degrees C at 250-300 nm. (c) 2008 Elsevier B.V. All rights reserved.