Thin Solid Films, Vol.517, No.5, 1592-1595, 2009
Study of manganese oxide thin films grown by pulsed laser deposition
In this paper, we report on the growth of manganese oxides thin films by Pulsed Laser Deposition using an MnO target at various oxygen pressures and substrate temperatures ranging from 550 to 800 degrees C. Grazing Incidence X-Ray Diffraction measurements on the grown films revealed that, at low deposition temperature. the dominant phase is Mn(2)O(3), but as the deposition temperature was raised above 700 degrees C, a phase transformation occurred leading to the formation of Mn(3)O(4). In a qualitative comparison, in the temperature range of 500-850 degrees C, and at a pressure below 13 Pa, the phase diagram of bulk manganese oxides and our grown films show a fair correlation. The films grown near the transition temperature (T=700 degrees C) were found to be very thin compared to those grown at lower or higher temperatures, but the surface roughness was found to increase with temperature, as determined by Atomic Force Microscopy. (C) 2008 Elsevier B.V. All rights reserved.
Keywords:Pulsed laser deposition;Manganese oxides;Phase transformation;X-ray diffraction;Surface structure;Morphology