This paper systematically studies the effect of pad material, grooving method and grooving pattern on interlayer dielectric chemical mechanical planarization. The tested polishing pads consist of thermoplastic and thermoset polyurethanes synthesized using two different processes. Grooves created using a molding technique are compared with grooves formed by mechanical cutting. The concentric groove design is also compared with the logarithmic positive spiral positive grooving design. Experimental data collected include removal rate, coefficient of friction, shear force variance, pad temperature and dynamic mechanical analyzer measurements. Scanning electron microscope images are used to correlate grooving methods with coefficient of friction and shear force variance measurements. Results show that all of the pads polish wafers in boundary lubrication mode with unique friction coefficient, shear force variance and pad temperature characteristics. Simulations using a two-step removal rate mechanism are performed to estimate the chemical and mechanical rate constants. The analysis indicates that the thermoplastic pad is more mechanically controlled than the thermoset pad and that molded grooving induces a more mechanically controlled process than non-optimized machined grooving. (C) 2008 Elsevier B.V. All rights reserved.