Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized films. Band gap values in the range of 1.18-1.63 eV were obtained. (C) 2008 Elsevier B.V. All rights reserved.