We have fabricated a novel image sensor using Cu(In,Ga)Se-2 (CIGS). A combined process of dry etching using HBr and Ar gasses and wet etching using dilute HCl solution was developed as isolation process of CIGS photodiode deposited at 400 degrees C. Etchant residues of the dry etching, which consist of Cu complex, were almost completely cleaned using the wet etching process and favorable vertical side wall of CIGS films was obtained without mechanical damages. As a result, high performance image sensors with low leakage current of similar to 10(-8) A/cm(2) and wide wavelength range up to similar to 1240 nm were achieved. The developed image sensor consisted of 352 x 288 pixels with 10 mu m x 10 mu m pixel sizes, was able to capture clear images of night scenes. (C) 2008 Elsevier B.V. All rights reserved.