Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the OVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV. (C) 2008 Elsevier B.V. All rights reserved.