Thin Solid Films, Vol.517, No.7, 2515-2518, 2009
Non-equilibrium charge carriers generation - recombination mechanisms at the interface of the SnO2/GaSe heterojunction
The interface of the SnO2/GaSe heterojunctions, having SnO2 layer obtained by different deposition methods have been studied using the photoluminescence and photocurrent spectral distribution. The SnO2/GaSe structures are photosensitive in the 1.7 divided by 3.6 eV spectral range and reveal its maximum value for the heterojunctions with magnetron sputtered SnO2 layer. (C) 2008 Elsevier B.V. All rights reserved.