The crystallization of amorphous thin films was achieved by 13.56 MHz RF (radio frequency) plasma treatment. This crystallization process has a strong advantage that the sample temperature is lower than 120 degrees C during the plasma treatment even without compulsory cooling and various amorphous films are crystallized after 2 min or so. This treatment works on amorphous films of various materials, independently of the film preparation method and substrate materials. Crystallization has been confirmed on amorphous thin films of sputtered ITO (tin doped indium oxide) deposited on soda-lime glass and PET (polyethylene terephthalate), of sputtered TiO(2) on soda-lime glass, of sol-gel derived TiO(2) on silicon wafer and of sputtered hydrogen-doped silicon on soda-lime glass. The plasma gas pressure was found to be the key parameter in the plasma crystallization process. The appropriate gas pressure depends on the plasma gas species and not on film or substrate materials. A Cu electrode, attached to the backside of the substrate and is electrically floated from the electric ground, was found to enhance the plasma crystallization performance. (C) 2008 Elsevier B.V. All rights reserved.