We investigate the characteristics of amorphous silicon thin film transistors (a-Si TFTs) fabricated by plasma-enhanced chemical vapor deposition (PECVD) and catalytic CVD (Cat-CVD), and their stability under bias and temperature (BT) accelerated stress. The Cat-CVD a-Si TFTs have off-leak current as small as 10(-14) A, and a smaller threshold voltage shift under the BT stress. The superiority in off-leak current and stability is observed in the Cat-CVD a-Si TFTs fabricated at both 320 degrees C and 180 degrees C. The high performance and stability of the Cat-CVD a-Si TFTs will enable to use low-cost glass substrates and result in a cost reduction of TFT fabrication. (C) 2009 Elsevier B.V. All rights reserved.