In this paper, reactive ion etching of Au is performed with CF4/Ar gases, and process optimization method is suggested using a statistically established process model. The I-optimal design was employed to set up the etching experiment with operating parameters, namely, gas composition, RF power and chamber pressure. Its analysis was performed on individual parameters of the etch rate, selectivity, and profile. In addition, process optimization, including all three responses of interest, is provided simultaneously. We confirmed that a nonvolatile by-product AuFx was re-deposited on the surface, but controlling the amount of carbon fluoride provided a good etch rate with a satisfactory sidewall profile by reducing by-products. Although RF power is closely related with etch rate, increased power gives poor selectivity due to increased physical etching. Pressure and gas flows strongly interact with each other, affecting sidewall characteristics. Suggested optimization simultaneously considers three responses of interests, which is crucial in process development and optimization for quickly ramping up high volume manufacturing. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.