In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 degrees C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 x 10(-2) Omega cm and highest mobility of 33.1 cm(2)/Vs was observed at the In content of 0.3 at.%. (C) 2009 Elsevier B.V. All rights reserved.