Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO2 template in a propylene carbonate solution at 130 degrees C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at -0.62 V and an anodic pulse at 0.75 V Vs Zn2+/Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E-v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 x 10(4) Omega cm and a charge carrier density of 1.67 x 10(14) cm(-3). Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density. (C) 2008 Published by Elsevier B.V.