The Si heterojunction (HJ) solar cells were fabricated on the textured p-type mono-crystalline Si (c-Si) substrates using hot-wire chemical vapor deposition (HWCVD). In view of the potential for the bottom cell in a hybrid junction structure, the microcrystalline Si (mu c-Si) film was used as the emitter with various PH(3) dilution ratios. Prior to the n-mu c-Si emitter deposition, a 5 nm-thick intrinsic amorphous Si layer (i-a-Si) was grown to passivate the c-Si surface. In order to improve the indium-tin oxide (ITO)/emitter front contact without using the higher PH(3) doping concentration, a laser doping technique was employed to improve the ITO/n-mu c-Si contact via the formation of the selective emitter structure. For a cell structure of Ag grid/ITO/n-mu c-Si emitter/i-a-Si/textured p-c-Si/Al-electrode, the conversion efficiency (AM1.5) can be improved from 13.25% to 14.31% (cell area: 2 cm x 2 cm) via a suitable selective laser doping process. (C) 2009 Elsevier B.V. All rights reserved.