The growth, fabrication, and subsequent electroluminescence (EL) characterization of an n-ZnO/p-GaN heterojunction light-emitting diode prepared on c-Al(2)O(3) substrate are presented. The diode-like I-V characteristics and room temperature EL spectrum with an intense broadband emission in the yellow-green spectral region has been observed with forward bias applied. Photoluminescence (PL) and Raman spectra of the n-ZnO and p-GaN films were also measured. By comparing PL and EL spectra, it was concluded that the deep-level defect-related emission mainly originated from the GaN epitaxial layer. (c) 2009 Elsevier B.V. All rights reserved.