CuInSe2 films were prepared at different deposition temperatures (T-D) by successive ionic layer adsorption and reaction method with chelating solutions. Influence of T-D on film growth, morphology, crystal structure, and band gap energy was investigated. Results showed that elevation of T-D mainly enhanced reaction kinetics and ionic diffusion velocity, resulting in fast growth rate of CuInSe2 films, and maximum 20-30 nm/cycle depended upon T-D were acquired. Films with 60 dip-cycles could grow from 180 nm to 1000 nm by elevating To from 30 degrees C to 90 degrees C. Surface roughness of CuInSe2 films was closely related to dip-cycle times and T-D. Accelerated growth rate by T-D could reduce the dip-cycle times for a required film thickness, which improved quality of film morphology. (C) 2009 Elsevier B.V. All rights reserved.