In atomic layer doping of P using an ultraclean low-pressure chemical vapor deposition (CVD), the relationship between surface segregation of P during Si cap layer growth at 450 degrees C with Si(2)H(6) partial pressure of 3-20 Pa on P atomic layer formed on Si(0.3)Ge(0.7)/Si(100) and the incorporated P amount at initial position has been investigated. For higher Si(2)H(6) partial pressure and for the initial P atom amount of P atomic layer below about 4 x 10(14)cm(-2), the incorporated P atoms are almost confined within the 1 nm region around the heterostructure interface. The P amount is nearly the same as the initial one. For initial P atom amount higher than 4 x 10(14)cm(-2), P segregation on surface is enhanced, and the incorporated P atom amount around the heterointerface tends to saturate to maximum value of about 4 x 10(14)cm(-2). This maximum value decreases with decreasing Si(2)H(6) partial pressure. These results suggest that the number of site at the heterointerface between Si cap layer and Si(0.3)Ge(0.7) layer, in which P atoms are incorporated, is about 4 x 10(14)cm(-2) and in the case of low Si(2)H(6) surface coverage, the incorporated P atom amount at the heterointerface decreases due to surface segregation. (C) 2009 Elsevier B.V. All rights reserved.