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Thin Solid Films, Vol.518, S174-S178, 2010
Al-induced low-temperature crystallization of Si-1 (-) Ge-x(x) (0 < x < 1) by controlling layer exchange process
Low-temperature (<450 degrees C) Al-induced crystallization (AIC) of a-Si1-xGex (050%). To realize uniform crystallization for high Ge fractions, effects of interfacial Al oxide layer thickness on layer exchange were investigated. By optimizing the oxide layer thickness, the layer exchange process could be controlled, and thus, homogeneous crystallization with large grain sizes (> 20 mu m) was achieved for samples with the whole Ge fractions. These findings will be a powerful tool for realizing large poly-SiGe on insulating films for high-efficiency thin-film solar cells and system-in-displays. (C) 2009 Elsevier B.V. All rights reserved.