Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 degrees C, trisilane (Si3H8) was used for their growth as an alternative Si precursor gas. Then, we compared the use Of Si3H8 versus SiH4 for Si1-xGex growth in H-2. and N-2 as carrier gas by low temperature chemical vapor deposition. By using Si3H8 and controlling GeH4 flow rate, Si1-xGex growth with high growth rate and wide range of Ge concentration has been achieved compared to SiH4-based process. The growth rate and Ge concentration in Si1-xGex with Si3H8 grown at 600 degrees C ranged from 11 to 74 nm/min and from 0 to 40%, respectively. The obtained growth rates with Si3H8 are between 1.5 and 6 times higher than for SiH4 at a given growth condition. Si3H8-based in-situ B- and C-doped Si1-xGex growth with high growth rate was also demonstrated. (C) 2009 Elsevier B.V. All rights reserved.