An empirical study of the selective vapor phase epitaxy kinetics of silicon germanium (Si(1-x)Ge(x)) alloys is developed with no assumption on an atomistic mechanism. The growth kinetics are approached efficiently with a power rate law. Partial reaction orders are identified for GeH(4), HCl and B(2)H(6) precursors. A trend analysis of the partial reaction order highlights the fine characteristics of the Si(1-x)Ge(x) growth kinetics. The power rate law evidences clearly the competition interactions between Si, Ge and B. Furthermore, a partial derivative study of the power rate law enabled an accurate sensitivity analysis of the selective process. (C) 2009 Elsevier B.V. All rights reserved.