The performance and stability of ZnO thin film transistors (TFTs) with three different insulators are examined. It is found that the on-state performance is significantly enhanced with AlN as gate insulator in comparison to SiO(2) or SiN. This behaviour is consistent with the excellent lattice match of AlN with ZnO which results in reduction of subthreshold slope. Despite enhanced on-state performance the shift in threshold voltage under gate bias stress however appears unmitigated. Stability in ZnO is primarily due to trapping within the bulk of the semiconductor and/or close to the interface. (C) 2009 Elsevier B.V. All rights reserved.