화학공학소재연구정보센터
Thin Solid Films, Vol.518, No.4, 1345-1349, 2009
Fluorine doped indium oxide films for silicon solar cells
The effect of conditions of preparation of the In(2)O(3):F(IFO)/(pp(+))Si solar cell (SC) by pyrosol method was systematically studied with the goal to maximize its photovoltage. Heterojunction IFO/(pp(+))Si SC was obtained with the efficiency of 16.6% and photovoltage of 617 mV as well as the IFO/(n(+)pp(+))Si SC with the efficiency of 19.2% using the following obtained optimal conditions: film-forming solution: 0.2 M InCl(3) + 0.05 M NH(4)F + 0.1 M H(2)O in methanol; carrier gas - Ar + 5% O(2); deposition temperature - 480 degrees C; duration of deposition - 2 min; two-minute annealing in argon with sprayed methanol at a temperature of 380 degrees C. (C) 2009 Elsevier B.V. All rights reserved.