In this study,we have synthesized N-doped beta-Ga2O3 nanowires on a p-type Si (100) substrate at the temperature of 850 degrees C through evaporation to modulate the spectra of the luminescence emission. Both TEM and XRD analyses confirmed that N-doped beta-Ga2O3 is monoclinic with a uniform mean diameter of 30 nm and a length up to several tens of micrometers. As determined by selected area diffraction (SAD), the growth direction of N-doped beta-Ga2O3 nanowires is [002]. The optical properties of the N-doped beta-Ga2O3 nanowires were studied by cathodoluminescence (CL) at the 10 and 300 K, exhibiting a UV and red light emission as a function of the nitrogen dopant. The results serve to reinforce the potential of N-doped beta-Ga2O3 nanowires for optoelectronic device applications. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.