Dual comb-type electrodes were developed as a plasma source in very high frequency (VHF) plasma enhanced chemical vapor deposition system for uniform deposition of silicon films. Two VHF powers introduced to each electrode produced parallel plasma bands, and their positions could be changed by manipulating the phase difference between the supplied VHF waves. Excitation frequency was 80 MHz. The maximum plasma density using this plasma source was 1.5 x 10(10)/cm(3) and the electron temperature was around 2 eV with input power of 2.5 kW, which were measured by double tip Langmuir probe. The uniformity of deposition rate under +/- 13% was achieved on 1 m(2) area with optimal plasma conditions. (C) 2009 Elsevier B.V. All rights reserved.