A Finite Element Method (FEM) Study of the coupled thermal-stress during the heteroepitaxial growth Induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-SrH) and germanium (a-Ge H) bi-layers deposited oil a Si(100) wafer is presented The ArF (193 nm) excimer laser provides high energy densities during very short laser Pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface In addition. the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures (C) 2009 Elsevier B V All rights reserved.