We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111) Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth The crystalline quality and interface properties of single-crystalline silicon on single-crystal line oxide grown oil Si(111) make the obtained structures suitable for silicon-on-insulator applications First measurements of electrical properties of p-type samples indicate good electrical properties of the top Si layer. Supplemental investigations demonstrate that Si layers with thickness in the range of 10 nm remain stable during thermal annealing up to 900 degrees C in an ultra-high vacuum. (c) 2009 Elsevier B.V. All rights reserved