Sol-gel grown polycrystalline Al doped zinc oxide (AZO) thin films have been deposited on Si wafers, microscopy slide glass and fluorine doped tin oxide coated glass substrates using the spin coating technique. The atomic ratio of Al:Zn in the films is 0.2. From the X-ray diffraction investigations it is found that the preferential growth of (100) reflection peak has taken place in the 450, 550 and 600 degrees C annealed films. Scanning electron microscopic study has shown that the films contain well-defined grains arranged in a closely packed array. The resistivity of the 500 degrees C annealed film is measured to be 5 x 10(-1) Omega cm. The films have exhibited excellent optical transmittance (similar to 90%) in the 400-1100 nm wavelength range. Refractive indices (n =1.9-1.95) of the films on Si wafer are independent of the annealing temperature. Thickness of the films produced at 4000 rpm is in the range of 58-62 nm. The refractive index and thickness of these films are nearly appropriate to cause destructive interference after reflection from front emitters of solar cells. These films have demonstrated a reflectivity value of about 3% at a wavelength of 700 nm. The AZO coated silicon solar cells possess V(oc) and I(sc) values of 573 mV and 237 mA, respectively. (C) 2009 Elsevier B.V. All rights reserved.