Sol-gel derived Pb(40)Sr(60)TiO(3) (PST) thin film has been investigated as a diffusion barrier for integrating in PbZr(30)Ti(70)O(3) (PZT) device structures on Si substrates. PST film was deposited on SiO(2)/Si substrate and annealed at a relatively low temperature range of 550-600 degrees C producing a crack-free, smooth and textured surface. Following deposition on PST/SiO(2)/Si template PZT thin film was crystallised exhibiting random grain orientations and an insertion of the bottom Pt/Ti electrode forming PZT/Pt/Ti/PST/SiO(2)/Si stacks promoted the preferred PZT (111) perovskite phase. PZT (111) peak intensity gradually decreased along with slight increase of the PZT (110) peak with increasing annealing temperature of the buffer PST film. The dielectric and ferroelectric properties of the PZT with barrier PST deposited at 550 degrees C were assessed. The dielectric constant and loss factor were estimated as 390 and 0.034 at 100 kHz respectively and the remnant polarisation was 28 mu C/cm(2) at 19 V. The performance of the PZT/PST device structures was compared to similar PZT transducer stacks having widely used barrier TiO(2) layer. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.