NiSi thin films grown on Si(001) substrates with a main crystal orientation of NiSi[200]//Si[001] were prepared and Raman spectroscopy was used to study effects of laser annealing on the NiSi thin films. Results show that the crystal quality of the NiSi films can be improved after laser annealing for 60 min at a laser power of 140 mW. We have shown that laser annealing can also be used to make structural phase transitions of NiSi domains under an annealing power of 480 mW for 10 min. (C) 2009 Elsevier B.V. All rights reserved.