By an ALD process with the solid precursors HfCl(4) and (CpCH(3))(3)Y and the oxidant water Yttrium doped HfO(2) was deposited on TiN layer on highly doped silicon. The films were analysed by ellipsometry, XRR, RBS and XRD. For the electrical characterisation, capacitance and I-V measurement on MIM structure were used. By doping the HfO(2) with 6.2 at.% Yttrium and annealing the film at 500 degrees C in N(2) the k-value increased by 60% for a 9.5 nm thick film, the leakage current also increased. The deposited amorphous film crystallises at 450 degrees C into the cubic phase. (C) 2009 Elsevier B.V. All rights reserved.