In this work, the advances in the resistance switching characteristics of stoichiometric ZrO2 thin films were studied. The Al/ZrO2/Al structure exhibits reliable and reproducible switching behaviours. The thickness dependence and electrode size effect was demonstrated and understood in terms of a combined model of conductive filament/carriers trapping. Analyses of current-voltage characteristics were performed and it is suggested that the resistive switching characteristics of the ZrO2 film are governed by both the electrode/interface effect and the formation of conductive multi-filaments. (C) 2009 Elsevier B.V. All rights reserved.