Films of gallium-doped zinc oxide (GZO) were deposited on glass substrates by radio-frequency magnetron sputtering using a ceramic target of Ga:ZnO (4 at.% Ga vs. Zn). Both the substrate temperature (T(s)) and the target-substrate distance (d(ts)) were varied and the effect on electrical, optical and structural properties of the resulting films were measured. The highest conductivity of 3200 S/cm was obtained at a deposition temperature of 250 degrees C, at a d(ts) of 51 mm. This sample had the highest carrier concentration in this study, 9.6 x 10(20)/cm(3). Optical transmittance of all films was <90% in the visible range. The grain size of the film grown at d(ts) = 51 mm was smaller than the grain size for films grown with a shorter d(ts); moreover, the films with d(ts) = 51 mm exhibited the smoothest surface, with a root mean square surface roughness of 2.7 nm. Changes in T(s) have a more pronounced effect on conductivity compared to changes in d(ts); however, variations in structure do not appear to be well-correlated with conductivity for samples in the 2000-3200 S/cm range. These results suggest that incorporation and activation of Ga is of key importance when attempting to obtain GZO films with conductivities greater than 2000 S/cm. (C) 2010 Elsevier B.V. All rights reserved.