The optical properties of boron- and phosphorus-doped polycrystalline silicon films with light (similar to 1 x 10(16)cm(-3)), moderate (similar to 5 x 10(17) cm(-3)) and heavy doping (similar to 1 x 10(19) CM(-3)) were investigated in this work. The films were prepared by solid-phase crystallization of evaporated amorphous silicon films on borosilicate glass. Tauc-Lorentz models with one or two oscillators were used to model both reflection and transmission data collected by a spectrophotometer over the wavelength range of 400 nm-2000 nm. The results indicate that the crystal quality of the films is improved by phosphorus doping, while boron has a negligible impact on the crystal quality. The poly-Si films exhibit greater absorption than c-Si for visible wavelengths. This enhanced absorption is believed to be associated with defected a-Si material at the grain boundaries and intra-grain defects. (C) 2010 Elsevier B.V. All rights reserved.