The phosphorous base doping dependence of evaporated poly-Si thin-film solar cell by aluminium-induced crystallization solid-phase epitaxy (ALICE) has been investigated. It is found that the open-circuit voltage (V(oc)) of the the poly-Si thin-film solar cell increases with the decrease of base doping density due to the defect-rich nature of poly-Si thin-film material and effectiveness of the back surface field. Meanwhile, the short-circuit current (J(sc)) also increases with the decrease of the base doping density as a result of the reduced doping-induced defects. Therefore, the maximum V(oc) and J(sc), are simultaneously achieved when the lowest phosphorous base doping density (similar to 5.5 x 10(15) cm(-3)) is applied. (C) 2010 Elsevier B.V. All rights reserved.