The processes of silicon nanocrystals (Si-NCs) growth on both SiO(2) and Si(3)N(4) substrates by low pressure chemical vapor deposition have been systematically investigated. A two-step process was adopted for Si-NCs growth: nucleation at a high temperature (580-600 degrees C) and growth at a low temperature (550 degrees C). By adjusting the pre-deposition waiting time and deposition time, the density, size and uniformity can be effectively controlled. Compared to the growth of Si-NCs on SiO(2), the coalescence speed of Si-NCs on Si(3)N(4) is faster. Uniform Si-NCs with a high density of 1.02 x 10(12) cm(-2) and 1.14 x 10(12) cm(-2) have been obtained on SiO(2) and Si(3)N(4), respectively. Finally, a Si-NCs-based memory structure with a 2.1 V memory window was demonstrated. (C) 2010 Elsevier B.V. All rights reserved.