In the present study, gold oxide (AuO(x)) and gold silver oxide (AuAgO(x)) thin films are deposited by reactive sputtering in a magnetron with unbalanced ratio continuously controlled by the current I(s) trough an external solenoid. Two film characteristics: the specific electric resistivity rho(o) of as deposited films and their life-times tau are systematically investigated in dependence of the oxygen gas pressure p(o2), magnetron discharge power P(m) and solenoid current I(s). It is demonstrated that employing optimal regime of ion assistance and gradient sublayers, AuO(x) and AuAgO(x) films with a high electric resistivity and long life-times (up to 3 years) can be deposited. Incorporation of the more reactive silver atoms into the film structure significantly changes the behavior of AuAgO(x) films as compared to that of AuO(x) films. While the initial electric resistivity and the life-time of AuAgO(x) films monotonously increase with the combined parameter's I(s) p(o2)/P(m) tending to saturation at higher values of this parameter, films of thermodynamically unstable gold oxide with long life-times can be produced within a narrow range of deposition parameters, only. (C) 2010 Elsevier B.V. All rights reserved.