The morphology and texture of Ge films grown under oblique angle vapor deposition on native oxide covered Si(001) substrates at temperatures ranging from 230 degrees C to 400 degrees C were studied using scanning electron microscopy, X-ray diffraction and X-ray pole figure techniques. A transition from polycrystalline to {001}< 110 > biaxial texture was observed within this temperature range. The Ge films grown at substrate temperatures <375 degrees C were polycrystalline. At substrate temperatures of 375 degrees C and 400 degrees C, a mixture of polycrystalline and biaxial texture was observed. The 230 degrees C sample consisted of isolated nanorods, while all other films were continuous. The observed biaxial texture is proposed to be a result of the loss of the interface oxide layer, resulting in epitaxial deposition of Ge on the Si and a texture following that of the Si(001) substrates used. The rate of oxide loss was found to increase under oblique angle vapor deposition. (C) 2011 Elsevier B.V. All rights reserved.